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Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2560
150
1505
15 1
130(Tc=25°C) 150
-“55to+150 Unit
V
V
V
A
A
W
°C
°C
nAbsolute maximum ratings nElectrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2560 100
max
100 max
150 min
5000 min*
2.5
max
3.0max
70typ
120 typ
Unit
mA
mA
V
V
V
MHz pF
Conditions
V
CB=150V
V
EB=5V
I
C=30mA
V
CE=4V, I C=10A
I
C=10A, I B=10mA
I
C=10A, I B=10mA
V
CE=12V, I E=-“2A
V
CB=10V, f=1MHz
Darlington 2SD2560
(Ta=25°C) (Ta=25°C)
IC-“ V CE Characteristics (Typical)
Safe Operating Area (Single Pulse)
0
0
10
5
15
246
Collector-Emitter Voltage V CE(V)
Collector Current I
C(A)
50mA
IB=0.3mA
0.5mA
0.8mA
2mA 1.0mA
3mA
10mA
1.5mA
VCE(sat)
-“
I B Characteristics (Typical)
0 3
2
1
0.2 1
0.5 10 5 200 100
50Base Current I B(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=.15A
IC=.10A
IC=.5A
IC-“
V BE Temperature Characteristics (Typical)
0
15
5
10
0 2 2.2 1
Base-Emittor Voltage V
BE(V)
Collector Current I
C(A)
(VCE=4V)
125ËšC (Case Temp) 25ËšC (Case Temp) -“30ËšC (Case Temp)
hFE-“ IC Characteristics (Typical)
Collector Current I C(A) 02 0.5 1 10 15 5
50000
1000 5000
10000
500
DC Current Gain h
FE
(VCE=4V)
Typ
02 0.5 1 10 15 5
50000
1000
5000
10000
500
DC Current Gain h
FE
(VCE=4V)
hFE-“IC Temperature Characteristics (Typical)
Collector Current I C(A)
125ËšC
-“30ËšC
25ËšC
qj-a-“
t Characteristics
0.1 1.0 3.0
0.5
1 10 100 1000 2000 Time t(ms)Transient Thermal Resistance
qj-a(ËšC/W)
fT-“IE Characteristics (Typical) (VCE=12V)
Emitter Current I
E(A) -“0.05
-“0.02 -“01 -“0.5 -“1 -“5 -“10 0
40
20 60 80
Cut-off Frequency f
T(MH
Z)
Pc
-“
Ta Derating
130
100
50
3.5 0
Ambient Temperature Ta(ËšC)
Maximum Power Dissipation P
C(W) With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
External Dimensions MT-100(TO3P)
15.6±0.49.6
19.9±0.3 4.0
2.0 5.0±0.21.8
ø3.2±0.1
2
3
1.05+0.2
-0.1 20.0min4.0max
BE 5.45±0.1 5.45±0.1 C
4.8±0.2
0.65+0.2-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No. nTypical Switching Characteristics (Common Emitter) V
CC(V)40 R L(
½ )
4 I C(A)
10 V BB2(V)
-“5 I B2(mA)
-“10 t on(ms)
0.8typ t stg(ms)
4.0typ t f(ms)
1.2typ
I B1(mA)
10 VBB1(V) 10
B C
E
(70
W)
Equivalent circuit
*hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
harman/kardon
AVR 347/230, AVR 350/230 Semiconductor Pinouts
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